摘要A copper nitride (Cu3N) thin film is deposited on a Si substrate by the reactive magnetron sputtering method. The XPS measurements of the composite film indicate that the Cu content in the film is increased to 80.82at.% and the value of the Cu/N ratio to 4.2:1 by introducing 4% H2 into the reactive gas. X-ray diffraction measurements show that the film is composed of Cu3N crystallites with an anti-ReO3 structure. The effects of the increase of copper content on the field emission characteristics of the Cu3N thin film are investigated. Significant improvement in emission current density and emission repeatability could be attributed to the geometric field enhancement, caused by numerous surface nanotips, and the decrease of resistivity of the film.
Abstract：A copper nitride (Cu3N) thin film is deposited on a Si substrate by the reactive magnetron sputtering method. The XPS measurements of the composite film indicate that the Cu content in the film is increased to 80.82at.% and the value of the Cu/N ratio to 4.2:1 by introducing 4% H2 into the reactive gas. X-ray diffraction measurements show that the film is composed of Cu3N crystallites with an anti-ReO3 structure. The effects of the increase of copper content on the field emission characteristics of the Cu3N thin film are investigated. Significant improvement in emission current density and emission repeatability could be attributed to the geometric field enhancement, caused by numerous surface nanotips, and the decrease of resistivity of the film.
(Scanning electron microscopy (SEM) (including EBIC))
引用本文:
WANG Tao;LI Rui-Shan;PAN Xiao-Jun;ZHANG Pei-Zeng;ZHOU Ming;SONGXi;XIE Er-Qing. Improvement of Field Emission Characteristics of Copper Nitride Films with Increasing Copper Content[J]. 中国物理快报, 2009, 26(6): 66801-066801.
WANG Tao, LI Rui-Shan, PAN Xiao-Jun, ZHANG Pei-Zeng, ZHOU Ming, SONGXi, XIE Er-Qing. Improvement of Field Emission Characteristics of Copper Nitride Films with Increasing Copper Content. Chin. Phys. Lett., 2009, 26(6): 66801-066801.
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