Growth of InAlGaN Quaternary Alloys by Pulsed Metalorganic Chemical Vapor Deposition
Ru-Dai Quan, Jin-Cheng Zhang** , Sheng-Rui Xu, Jun-Shuai Xue, Yi Zhao, Jing Ning, Zhi-Yu Lin, Ze-Yang Ren, Yue Hao
Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071
Abstract ：Epitaxial growth of InAlGaN/GaN structures are performed on the $c$-plane sapphire by pulsed metal organic chemical vapor deposition with different triethylgallium (TEGa) flows in the growth process of InAlGaN quaternary alloys. X-ray photoelectron spectroscopy results show that the Al/In ratio of the samples increases as the TEGa flows increase in the InAlGaN quaternary growth process. High-resolution x-ray diffraction results show that the crystal quality is improved with increasing TEGa flows. Morphology of the InAlGaN/GaN heterostructures is characterized by an atomic force microscopy, and the growth mode of the InAlGaN quaternary shows a 2D island growth mode. The minimum surface roughness is 0.20 nm with the TEGa flows equaling to 3.6 $\mu$mol/min in rms. Hall effect measurement results show that the highest electron mobility $\mu$ is 1005.49 cm$^{2}$/Vs and the maximal two-dimensional electron gas is $1.63\times10^{13}$ cm$^{-2}$.
收稿日期: 2015-12-22
出版日期: 2016-04-29
:
81.05.Bx
(Metals, semimetals, and alloys)
81.05.Ea
(III-V semiconductors)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
81.15.Kk
(Vapor phase epitaxy; growth from vapor phase)
引用本文:
. [J]. 中国物理快报, 2016, 33(04): 48101-048101.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/33/4/048101
或
https://cpl.iphy.ac.cn/CN/Y2016/V33/I04/48101
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2016, Vol. 33 
