中国物理快报  2016, Vol. 33 Issue (10): 108104-108104    DOI: 10.1088/0256-307X/33/10/108104
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Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition
Ru-Dai Quan, Jin-Cheng Zhang**, Ya-Chao Zhang, Wei-Hang Zhang, Ze-Yang Ren, Yue Hao
Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071