摘要Thick GaN films with high quality are directly grown on sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The optical and structural properties of large scale columnar domains near the interface are studied using cathodoluminescence and micro-Raman scattering. These columnar domains show a strong emission intensity due to extremely high free carrier concentration up to 2×1019cm-3, which are related with impurities trapped in structural defects. The compressive stress in GaN film clearly decreases with increasing distance from interface. The quasi-continuous columnar domains play an important role in the stress relaxation for the upper high quality layer.
Abstract：Thick GaN films with high quality are directly grown on sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The optical and structural properties of large scale columnar domains near the interface are studied using cathodoluminescence and micro-Raman scattering. These columnar domains show a strong emission intensity due to extremely high free carrier concentration up to 2×1019cm-3, which are related with impurities trapped in structural defects. The compressive stress in GaN film clearly decreases with increasing distance from interface. The quasi-continuous columnar domains play an important role in the stress relaxation for the upper high quality layer.
WEI Tong-Bo;MA Ping;DUAN Rui-Fei;WANG Jun-Xi;LI Jin-Min;ZENG Yi-Ping. Columnar Structures and Stress Relaxation in Thick GaN Films Grown on Sapphire by HVPE[J]. 中国物理快报, 2007, 24(3): 822-824.
WEI Tong-Bo, MA Ping, DUAN Rui-Fei, WANG Jun-Xi, LI Jin-Min, ZENG Yi-Ping. Columnar Structures and Stress Relaxation in Thick GaN Films Grown on Sapphire by HVPE. Chin. Phys. Lett., 2007, 24(3): 822-824.
[1] Nakamura S, Senoh M, Iwasa N and Nagahama S 1995 Appl.Phys. Lett. 67 1868 [2] Xu G Y, Salvador A, Kim W, Fan Z, Lu C, Tang H, Morkic H, Smith G,Estes M, Goldenberg B, Yang W and Krishnankutty S 1997 Appl. Phys.Lett. 71 2154 [3] Lu Y, Yang Zh J, Pan Y B, Xu K, Hu X D, Zhang B and Zhang G Y 2006 Chin. Phys. Lett. 23 256 [4] Eunsoon O, Lee S K, Park S S, Lee K Y, Song I J and Han J Y2001 Appl. Phys. Lett. 78 273 [5] Yu H Q, Chen L, Zhang R, Xiu X Q, Xie Z L, Ye Y D, Gu Sh L, Shen B,Shi Y and Zheng Y D 2004 Chin. Phys. Lett. 21 1825 [6] Gu Sh L, Zhang R, Shi Y, Zheng Y D, Zhang L, Dwikusuma F and KuechT F 2001 J. Crystal Growth 231 342 [7] Zhou J, Tang Y J and Zhang G Y 2002 Solid StateCommunications 121 381 [8] Bendersky L A, Tsvetkov D V and Melnik Y V 2003 J. Appl.Phys. 94 1676 [9] Pophristic M, Long F H, Schurman M, Ramer J and Ferguson I T 1999 Appl. Phys. Lett. 74 3519 [10] Harima H, Sakashita H and Nakashima S 1998 Mater. Sci.Forum 264-268 1369 [11] Goldys E M, Paskova T, Ivanov I G, Arnaudov B and Monemar B 1998 Appl. Phys. Lett. 73 3583 [12] Demangeot F, Frandon J, Renucci M A, Meny C, Briot O and AulombardR L 1997 J. Appl. Phys. 82 1305 [13] Kaschner A, Hoffmann A, Thomsen C, Thomsen C, Bertram F, RiemannT, Christen J, Hiramatsu K, Sone H and Sawaki N 2000 Appl. Phys.Lett. 76 3418 [14] Kisielowski C, Kruger J, Ruvimov S, Suski T, Ager III J W, JonesE, Liliental-Weber Z, Rubin M, Weber E R and Bremser M D 1996 Phys.Rev. B 54 17745
2007, Vol. 24 
