摘要We investigate effects of nitridation on AlN morphology, structural properties and stress. It is found that 3min nitridation can prominently improve AlN crystal structure, and slightly smooth the surface morphology. However, 10min nitridation degrades out-of-plane crystal structure and surface morphology instead. Additionally, 3-min nitridation introduces more tensile stress (1.5GPa) in AlN films, which can be attributed to the weaker islands 2D coalescent. Nitridation for 10min can introduce more defects, or even forms polycrystallinity interlayer, which relaxes the stress. Thus, the stress in AlN with 10min nitridation decreases to -0.2GPa compressive stress.
Abstract:We investigate effects of nitridation on AlN morphology, structural properties and stress. It is found that 3min nitridation can prominently improve AlN crystal structure, and slightly smooth the surface morphology. However, 10min nitridation degrades out-of-plane crystal structure and surface morphology instead. Additionally, 3-min nitridation introduces more tensile stress (1.5GPa) in AlN films, which can be attributed to the weaker islands 2D coalescent. Nitridation for 10min can introduce more defects, or even forms polycrystallinity interlayer, which relaxes the stress. Thus, the stress in AlN with 10min nitridation decreases to -0.2GPa compressive stress.
HU Wei-Guo;JIAO Chun-Mei;WEI Hong-Yuan;ZHANG Pan-Feng;KANG Ting-Ting;ZHANG Ri-Qing;LIU Xiang-Lin. Effect of Nitridation on Morphology, Structural Properties and Stress of AlN Films[J]. 中国物理快报, 2008, 25(12): 4364-4367.
HU Wei-Guo, JIAO Chun-Mei, WEI Hong-Yuan, ZHANG Pan-Feng, KANG Ting-Ting, ZHANG Ri-Qing, LIU Xiang-Lin. Effect of Nitridation on Morphology, Structural Properties and Stress of AlN Films. Chin. Phys. Lett., 2008, 25(12): 4364-4367.
[1] Taniyasu Y, Kasu M and Makimoto T 2006 Nature 44 325 [2] Amano H, Sawaki N, Akasaki I and Toyoda Y 1986 Appl.Phys. Lett. 48 353 [3] Chierchia R, B\"{ottcher T, Heinke H, Einfeldt S, Figge Sand Hommel D 2003 J. Appl. Phys. 93 8918 [4] Wager J M and Bechstedt F 2000 Appl. Phys. Lett. 77 346 [5] Azuhata T, Sota T, Suzuki K and Nakamaura S 1995 J.Phys: Condens. Matter 7 L129 [6] Hiramatus K, Detchprohm T and Akasaki I 1993 Jpn. J.Appl. Phys. 32 1528 [7] Iwanaga H, Kunishige A and Takeuchi S 2000 J. Mater.Sci. 35 2451 [8] Arguello C A, Rousseau D L and Porto S P S 1969 Phys.Rev. B 181 1351 [9] Wei H Y, Hu W G, Zhang P F, Liu X L, Zhu Q S and Wang Z G2007 Chin. Phys. Lett. 24 1738 [10] Uchida K, Watanabe A, Yano F, Kouguchi M, Tanaka T andMinagawa S 1996 J. Appl. Phys. 79 3487 [11] Hashimoto T, Terakoshi Y, Ishida M, Yuri M, Imafuji O,Sugino T, Yoshikawa A and Itoh K 1998 J. Cryst. Growth 189/190 254 [12] Yeadon M, Marshall M T, Hamdani F, Pekin S, Morkoc H andGibson J M 1998 Mater. Res. Soc. Symp. Proc. 482 99 [13] Venn\'{egu\`{es P and Beaumont B 1999 Appl. Phys.Lett. 75 4115 [14] Seelamann-Eggebert M, Zimmermann H, Obloh H, Niebuhr Rand Wachtendorf B 1998 J. Vac. Sci. Technol. A 16 2008 [15] Dwikusuma F and Kuech T F 2003 J. Appl. Phys. 94 5656 [16] Yeadon M, Marshall M T, Hamdani F, Pekin S and Morkoc H1998 J. Appl. Phys. 83 2847 [17] Kim K S, Kim S H and Lee D R 2000 Appl. Phys. Lett. 76 1552 [18] Hoffman R W 1976 Thin Solid Films 34 185 [19] Rajamani A, Beresford R and Sheldon BW 2001 Appl.Phys. Lett. 79 3776 [20] Wan K, Porporati A A, Feng G, Yang H and Pezzotti G 2006 Appl. Phys. Lett. 88 25190 [21] Windischmann H, Epps G F, Cong Y and Collins R W 1991 J. Appl. Phys. 69 2231