Growth of $\beta$-Ga$_{2}$O$_{3}$ Films on Sapphire by Hydride Vapor Phase Epitaxy
Ze-Ning XIONG, Xiang-Qian XIU** , Yue-Wen LI, Xue-Mei HUA, Zi-Li XIE, Peng CHEN, Bin LIU, Ping HAN, Rong ZHANG** , You-Dou ZHENG
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
Abstract ：Two-inch Ga$_{2}$O$_{3}$ films with ($\bar{2}$01)-orientation are grown on $c$-sapphire at 850–1050$^{\circ}\!$C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure $\beta$-Ga$_{2}$O$_{3}$ with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in $\beta$-Ga$_{2}$O$_{3}$ grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 eV.
收稿日期: 2018-01-08
出版日期: 2018-04-30
:
81.15.Kk
(Vapor phase epitaxy; growth from vapor phase)
68.55.-a
(Thin film structure and morphology)
78.20.-e
(Optical properties of bulk materials and thin films)
78.30.-j
(Infrared and Raman spectra)
引用本文:
. [J]. 中国物理快报, 2018, 35(5): 58101-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/35/5/058101
或
https://cpl.iphy.ac.cn/CN/Y2018/V35/I5/58101
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2018, Vol. 35 
