Trap States in Al2 O3 InAlN/GaN Metal-Oxide-Semiconductor Structures by Frequency-Dependent Conductance Analysis
ZHANG Peng** , ZHAO Sheng-Lei, XUE Jun-Shuai, ZHANG Kai, MA Xiao-Hua, ZHANG Jin-Cheng, HAO Yue
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
Abstract ：We present a detailed analysis of the trap states in atomic layer deposition Al2 O3 /InAlN/GaN high electron mobility transistors grown by pulsed metal organic chemical vapor deposition. Trap densities, trap energies and time constants are determined by frequency-dependent conductance measurements. A high trap density of up to 1.6×1014 cm?2 eV?1 is observed, which may be due to the lack of the cap layer causing the vulnerability to the subsequent high temperature annealing process.
收稿日期: 2013-11-06
出版日期: 2014-02-28
:
73.61.Ey
(III-V semiconductors)
85.30.Tv
(Field effect devices)
73.50.Gr
(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
73.40.Qv
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
引用本文:
. [J]. 中国物理快报, 2014, 31(03): 37302-037302.
2 O3 InAlN/GaN Metal-Oxide-Semiconductor Structures by Frequency-Dependent Conductance Analysis. Chin. Phys. Lett., 2014, 31(03): 37302-037302.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/31/3/037302
或
https://cpl.iphy.ac.cn/CN/Y2014/V31/I03/37302
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2014, Vol. 31 
