Highly Sensitive Detection of Deoxyribonucleic Acid Hybridization Using Au-Gated AlInN/GaN High Electron Mobility Transistor-Based Sensors
Xiang-Mi Zhan1, Mei-Lan Hao1,4, Quan Wang1, Wei Li1, Hong-Ling Xiao1,2,3, Chun Feng1,3, Li-Juan Jiang1,3, Cui-Mei Wang1,2,3, Xiao-Liang Wang1,2,3**, Zhan-Guo Wang1,3
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049 3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083 4Department of Electro-mechanics, Handan College, Handan 056005
Abstract：Gallium nitride- (GaN) based high electron mobility transistors (HEMTs) provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid (DNA) hybridization. The Au-gated AlInN/GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor. For the former, the drain-source current ($V_{\rm DS}=0.5$ V) shows a clear decrease of 69 $\mu$A upon the introduction of 1 $\mu$molL$^{-1}$ ($\mu$M) complimentary DNA to the probe DNA at the sensor area, while for the latter it is only 38 $\mu$A. This current reduction is a notable indication of the hybridization. The high sensitivity can be attributed to the thinner barrier of the AlInN/GaN heterostructure, which makes the two-dimensional electron gas channel more susceptible to a slight change of the surface charge.
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2017, Vol. 34 
