Effect of Carbonized Conditions on Residual Strain and Crystallinity Quality of Heteroepitaxial Growth 3C-SiC Films
CHEN Da, ZHANG Yu-Ming, ZHANG Yi-Men, WANG Yue-Hu, TANG Xiao-Yan
School of Microelectronics, Xidian University, Xi'an 710071Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071
Effect of Carbonized Conditions on Residual Strain and Crystallinity Quality of Heteroepitaxial Growth 3C-SiC Films
CHEN Da, ZHANG Yu-Ming, ZHANG Yi-Men, WANG Yue-Hu, TANG Xiao-Yan
School of Microelectronics, Xidian University, Xi'an 710071Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071
摘要Heteroepitaxial growth of SiC on n-Si(111) substrates is performed by a low pressure chemical vapor deposition process. The effects of different carbonized temperature and carbonized time on the crystalline quality and the residual strain of 3C-SiC films are discussed. The results show that the residual strain is obviously reduced and the crystalline quality is greatly improved at the best carbonized temperature of 1000°C and the carbonized time of 5min. Under these optimized carbonization conditions, thick epitaxial films of about 15μm with good crystalline quality and low residual strain can be obtained.
Abstract：Heteroepitaxial growth of SiC on n-Si(111) substrates is performed by a low pressure chemical vapor deposition process. The effects of different carbonized temperature and carbonized time on the crystalline quality and the residual strain of 3C-SiC films are discussed. The results show that the residual strain is obviously reduced and the crystalline quality is greatly improved at the best carbonized temperature of 1000°C and the carbonized time of 5min. Under these optimized carbonization conditions, thick epitaxial films of about 15μm with good crystalline quality and low residual strain can be obtained.
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2009, Vol. 26 
