| 2009, Vol. 26(8): 86106-086106 DOI: 10.1088/0256-307X/26/8/086106 | ||
| Effect of Carbonized Conditions on Residual Strain and Crystallinity Quality of Heteroepitaxial Growth 3C-SiC Films | ||
| CHEN Da, ZHANG Yu-Ming, ZHANG Yi-Men, WANG Yue-Hu, TANG Xiao-Yan | ||
| School of Microelectronics, Xidian University, Xi'an 710071Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071 | ||
| 收稿日期 2009-05-04 修回日期 1900-01-01 | ||
| Supporting info | ||
[1] Bushroa A R, Jacob C, Saiji H and Nishino S 2004 J. Cryst. Growth 271 200 [2] Nishiguchi T, Nakamura M, Nishio K, Isshiki T and Nishino S 2004 [3] Muller S G, Brady M F and Brixius W H 2003 Mater. Sci. Forum. [4] Severino A, Arrigo G D, Bongiorno C, Via F L and Foti G 2007 [5] Zielinski M, Leycuras A, Ndiaye S and Chassagne T 2006 Appl. Phys. Lett. [6] Ferro G, Chassagne T, Leycuras A, Cauwet F and Monteil Y 2006 Chem. [7] Hurt\`{os E and Viejo H R 2000 J. Appl. Phys. 87 1748 [8] Zgheib C, Mcneil L E, Kazan M, Masri P, Morales F M, Ambacher O and |
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