STUDY OF NEUTRON IRRADIATED a-Si:H
WANG Shulin, CHENG Ruguang, QI Mingwei1 , TANG Wenguo2 , SHEN Xuechu2 , GAO Jijin3
Shanghai Institute of Ceramics, Academia Sinica, Shanghai 200050
1 Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
2 Infrared Laboratory, Shanghai Institute of Technical Physics Academia Sinica, Shanghai 200083
3 Institute of Atomic Energy, Beijing 102413
STUDY OF NEUTRON IRRADIATED a-Si:H
WANG Shulin;CHENG Ruguang;QI Mingwei1 ;TANG Wenguo2 ;SHEN Xuechu2 ;GAO Jijin3
Shanghai Institute of Ceramics, Academia Sinica, Shanghai 200050
1 Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
2 Infrared Laboratory, Shanghai Institute of Technical Physics Academia Sinica, Shanghai 200083
3 Institute of Atomic Energy, Beijing 102413
关键词 ：
61.80.Hg ,
81.15.Gh ,
81.60.Cp ,
72.80.-r
Abstract ： Neutron transmutation doping (NTD) effect in hydrogenated amorphous silicon (a-Si:H) has been reexamined. There is no increase of both dark and photoconductivity of neutron irradiated a-Si:H after annealing at 180°C or 240°C . Our experimental results support Burnett et al. who contradict the finding that NTD in a-Si:H is effective by Hamanaka et al.
Key words ：
61.80.Hg
81.15.Gh
81.60.Cp
72.80.-r
出版日期: 1990-09-01
:
61.80.Hg
(Neutron radiation effects)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
81.60.Cp
72.80.-r
(Conductivity of specific materials)
引用本文:
WANG Shulin;CHENG Ruguang;QI Mingwei;TANG Wenguo;SHEN Xuechu;GAO Jijin. STUDY OF NEUTRON IRRADIATED a-Si:H[J]. 中国物理快报, 1990, 7(9): 418-420.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1990/V7/I9/418
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