IDENTIFICATIONS OF PHOTOLUMINESCENCE AND DEEP LEVEL TRANSIENT SPECTRA FOR Te-DOPED A1x Ga1-x As
KANG Junyong, HUANG Qisheng, LIN Hong, CHEN Chao
Department of Physics, Xiamen University, Xiamen 361005
IDENTIFICATIONS OF PHOTOLUMINESCENCE AND DEEP LEVEL TRANSIENT SPECTRA FOR Te-DOPED A1x Ga1-x As
KANG Junyong;HUANG Qisheng;LIN Hong;CHEN Chao
Department of Physics, Xiamen University, Xiamen 361005
关键词 ：
71.55.Eq ,
72.80.Ey
Abstract ： A bound-exciton and a donor-acceptor(D-A) pair emission in photoluminescence are identified for Te-doped A1x Ga1-x As. The D-A pair emission near band edge is assigned as Te-related donor to carbon acceptor transition and the donor binding energy is determined as a function of composition x up to 0.75. Except the deep DX level, a new shallower deep state is found in deep level transient spectra under light illumination and is associated with Te-related donor state in PL.
Key words ：
71.55.Eq
72.80.Ey
出版日期: 1990-09-01
引用本文:
KANG Junyong;HUANG Qisheng;LIN Hong;CHEN Chao. IDENTIFICATIONS OF PHOTOLUMINESCENCE AND DEEP LEVEL TRANSIENT SPECTRA FOR Te-DOPED A1x Ga1-x As[J]. 中国物理快报, 1990, 7(9): 421-424.
x Ga1-x As. Chin. Phys. Lett., 1990, 7(9): 421-424.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1990/V7/I9/421
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1990, Vol. 7 
