Temperature-Dependent Electron Transport in In0.5Ga0.5P/GaAs Grown by MOVPE
S. Acar1, A. Yildiz2, M. Kasap1, M. Bosi3
1Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokular, 06500 Ankara, Turkey2Department of Physics, Faculty of Science and Arts, University of Ahi Evran, Ki rc sehir, Turkey3IMEM-CNR Institute, Parco area delle Scienze 37/A, 43010 Fontanini (Parma), Italy
Temperature-Dependent Electron Transport in In0.5Ga0.5P/GaAs Grown by MOVPE
S. Acar1;A. Yildiz2;M. Kasap1;M. Bosi3
1Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokular, 06500 Ankara, Turkey2Department of Physics, Faculty of Science and Arts, University of Ahi Evran, Ki rc sehir, Turkey3IMEM-CNR Institute, Parco area delle Scienze 37/A, 43010 Fontanini (Parma), Italy
摘要Hall effect measurements in undoped In0.5Ga0.5P/GaAs alloy grown by metal organic vapour-phase epitaxy (MOVPE) have been carried out in the temperature range 15--350K. The experimental results are analysed using a two-band model including conduction band transport calculated using an iterative solution of the Boltzmann equation. A good agreement was obtained between theory and experiment. The impurity contents of In0.5Ga0.5P/GaAs alloy, such as donor density ND, acceptor density NA and donor activation energy εD, were also determined.
Abstract：Hall effect measurements in undoped In0.5Ga0.5P/GaAs alloy grown by metal organic vapour-phase epitaxy (MOVPE) have been carried out in the temperature range 15--350K. The experimental results are analysed using a two-band model including conduction band transport calculated using an iterative solution of the Boltzmann equation. A good agreement was obtained between theory and experiment. The impurity contents of In0.5Ga0.5P/GaAs alloy, such as donor density ND, acceptor density NA and donor activation energy εD, were also determined.
S. Acar;A. Yildiz;M. Kasap;M. Bosi. Temperature-Dependent Electron Transport in In0.5Ga0.5P/GaAs Grown by MOVPE[J]. 中国物理快报, 2007, 24(8): 2373-2375.
S. Acar, A. Yildiz, M. Kasap, M. Bosi. Temperature-Dependent Electron Transport in In0.5Ga0.5P/GaAs Grown by MOVPE. Chin. Phys. Lett., 2007, 24(8): 2373-2375.
[1] Tsai M K, Tan S W, Wu YW, Lour W S and Yang Y J 2002 Semicond. Sci. Technol. 17 156 [2] Ma Y and Li G P 2006 J. Electrostat. 64 88 [3] Khan A, Yamaguchi M and Takamoto T 2004 Appl. Phys. Lett. 85 3098 [4] Bosi M and Pelosi C 2007 Prog. Photovolt: Res. Appl. 15 51 [5] Krutogolov Y K, Kunak\'\i n Y I and Matyash A A 2001 J. Mater.Sci.: Mater. Electron. 12 645 [6] Lothian J R, Kuo J M, Rem F and Pearton S J 1992 J. Electon.Mater. 21 441 [7] Biswas D, Debbar N, Battacharya, P Razeghi M, Defour M and Omnes F1990 Appl. Phys. Lett. 56 833 [8] Bensaada A et al 1994 J. Appl. Phys. 75 3024 [9] Bettini J, Carvalho M M G, Cotta M A and Ugarte D 2003 Surf.Sci. 540 129 [10] Jiang G C et al 1995 J. Appl. Phys. 78 2886 [11] Yoon I T 1998 J. Mat. Sci. Lett. 17 2043 [12] Nag B R and Das M 1998 J. Apply. Phys. 83 5862 [13] Kanga H I et al 2002 Solid State Commun. 122 591 [14] Pelosi C et al 2005 Cryst. Res. Technol. 40 982 [15] Look D C and Molnar R J 1997 Appl. Phys. Lett. 70 3377 [16] Blakemore J S 1962 Semiconductor Statistics (New York:Pergamon) [17] Yoon I T and Park H L 1999 Thin Solid Films 340 297 [18] Fortini A, Diguet D and Lugand J 1970 J. Appl. Phys. 41 3121 [19] Bardeen J and Shockley W 1950 Phys. Rev. 80 72 [20] Zook J D 1964 Phys. Rev. 136 A869 [21] Littlejohn M A et al 1978 Solid State Electron. 21 107 [22] Rode D L 1975 Semiconductors and Semimetals ed Willardson RK and Beer A C (New York: Academic) vol 10 chap 1 [23] Rode D L 1970 Phys. Rev. B 2 1012 [24] Rode D L 1971 Phys. Rev. B 3 3287 [25] Rode D L 1973 Phys. Status Solidi B 55 687 [26] Rode D L and Knight S 1971 Phys. Rev. B 3 2534 [27] Kasap M and Lancefield D 1997 Phys. Status Solidi B 199 481
2007, Vol. 24 
