Quasi-Random Resistor Network Model for Linear Magnetoresistance of Metal--Semiconductor Composite
XU Jie1,2, ZHANG Duan-Ming1, DENG Zong-Wei1, YANG Feng-Xia1, LI Zhi-Hua1, PAN Yuan2
1School of Physics, Huazhong University of Science and Technology, Wuhan 4300742College of Electric and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074
Quasi-Random Resistor Network Model for Linear Magnetoresistance of Metal--Semiconductor Composite
XU Jie1,2, ZHANG Duan-Ming1, DENG Zong-Wei1, YANG Feng-Xia1, LI Zhi-Hua1, PAN Yuan2
1School of Physics, Huazhong University of Science and Technology, Wuhan 4300742College of Electric and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074
A new model for the linear magentoresistance (MR) of the Ag2+δSe and Ag2+δ Te thin films is proposed. The thin film is considered as a metal--semiconductor composite and dispersed into an N×N quasi-random resistor network. The network is constructed from four-terminal resistors and the mobility of carries μ within the network has a quasi-random distribution, i.e. a Gaussian distribution with two constraint conditions. The model predicts that the MR increases with the increasing magnetic fields, and increases linearly at high field. Moreover, the MR decreases with the increasing temperatures. A good agreement between the theoretical MR and the available experimental data is found.
A new model for the linear magentoresistance (MR) of the Ag2+δSe and Ag2+δ Te thin films is proposed. The thin film is considered as a metal--semiconductor composite and dispersed into an N×N quasi-random resistor network. The network is constructed from four-terminal resistors and the mobility of carries μ within the network has a quasi-random distribution, i.e. a Gaussian distribution with two constraint conditions. The model predicts that the MR increases with the increasing magnetic fields, and increases linearly at high field. Moreover, the MR decreases with the increasing temperatures. A good agreement between the theoretical MR and the available experimental data is found.
XU Jie;ZHANG Duan-Ming;DENG Zong-Wei; YANG Feng-Xia;LI Zhi-Hua;PAN Yuan. Quasi-Random Resistor Network Model for Linear Magnetoresistance of Metal--Semiconductor Composite[J]. 中国物理快报, 2008, 25(11): 4124-4127.
XU Jie, ZHANG Duan-Ming, DENG Zong-Wei, YANG Feng-Xia, LI Zhi-Hua, PAN Yuan. Quasi-Random Resistor Network Model for Linear Magnetoresistance of Metal--Semiconductor Composite. Chin. Phys. Lett., 2008, 25(11): 4124-4127.
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2008, Vol. 25 
