A series of Co0.48(Alq3)0.52 granular films were deposited on silicon substrates using the co-evaporating technique. A crossover of magnetoresistance (MR) from negative to positive was observed in the samples, due to conducting channel switching. The transport properties of samples are greatly influenced by hydrofluoric acid pretreatment, as a result, positive MR decreases drastically and the temperature dependence of resistance changes a lot near room temperature. The result indicates that the native oxide layer plays an important role in the transport mechanism. Moreover, different resistivities of Si substrates influence the current distribution of conducting channels, leading to different transport behaviors accordingly.
A series of Co0.48(Alq3)0.52 granular films were deposited on silicon substrates using the co-evaporating technique. A crossover of magnetoresistance (MR) from negative to positive was observed in the samples, due to conducting channel switching. The transport properties of samples are greatly influenced by hydrofluoric acid pretreatment, as a result, positive MR decreases drastically and the temperature dependence of resistance changes a lot near room temperature. The result indicates that the native oxide layer plays an important role in the transport mechanism. Moreover, different resistivities of Si substrates influence the current distribution of conducting channels, leading to different transport behaviors accordingly.
(Galvanomagnetic and other magnetotransport effects)
引用本文:
ZHANG Yan;SHENG Peng;LIU Wen-Ming;SHU Qi;GU Zhi-Hua;NI Gang;. Influence of Substrate on the Transportation Properties of Co/Alq3 Granular Films on a Si Wafer[J]. 中国物理快报, 2010, 27(7): 78102-078102.
ZHANG Yan, SHENG Peng, LIU Wen-Ming, SHU Qi, GU Zhi-Hua, NI Gang,. Influence of Substrate on the Transportation Properties of Co/Alq3 Granular Films on a Si Wafer. Chin. Phys. Lett., 2010, 27(7): 78102-078102.
[1] Tang J K et al 2002 J. Appl. Phys. 91 8411 [2] Wang H et al 2008 New J. Phys. 10 093006 [3] Branford W R et al 2004 Appl. Phys. Lett. 84 2358 [4] Li M F et al 1999 J. Magn. Magn. Mater. 196-197 31 [5] Witanachchi S et al 2006 J. Appl. Phys. 99 073710 [6] Delmo M P et al 2009 Nature 457 1112 [7] Schoonus J et al 2008 Phys. Rev. Lett. 100 127202 [8] Xiong Z H et al 2004 Nature 427 821 [9] Drew A J et al 2009 Nature Mater. 8 109 [10] Pramanik S et al 2007 Nature Nanotech. 2 216 [11] Shu Q et al 2009 Chin. Phys. Lett. 26 077505 [12] Sheng P et al 1973 Phys. Rev. Lett. 31 44 [13] Dai J et al 2000 J. Phys. D 33 L65 [14] Witanachchi S et al 2007 Appl. Phys. Lett. 90 052102