We report the fabrication of high breakdown voltage metal-insulator-metal (MIM) capacitors with 200-nm silicon nitride deposited by plasma-enhanced chemical vapor deposition with 0.957 SiH4/NH3 gas mixing rate, 0.9 Torr working pressure, and 60 W rf power at 250º chamber temperature. Some optimized mechanisms such as metal source wiping, pre-melting and evaporation rate adjustment are used for increasing the yield of the MIM capacitors. N2 annealing and O2/H2 plasma pre-deposition treatment is proposed to increase the reliability of the MIM capacitors in high-temperature, high-pressure, and high-humidity environments. A 97% yield and up to 148 V breakdown voltage of a 13.06 pF MIM capacitor with 0.04 mm2 die area can be fabricated.
We report the fabrication of high breakdown voltage metal-insulator-metal (MIM) capacitors with 200-nm silicon nitride deposited by plasma-enhanced chemical vapor deposition with 0.957 SiH4/NH3 gas mixing rate, 0.9 Torr working pressure, and 60 W rf power at 250º chamber temperature. Some optimized mechanisms such as metal source wiping, pre-melting and evaporation rate adjustment are used for increasing the yield of the MIM capacitors. N2 annealing and O2/H2 plasma pre-deposition treatment is proposed to increase the reliability of the MIM capacitors in high-temperature, high-pressure, and high-humidity environments. A 97% yield and up to 148 V breakdown voltage of a 13.06 pF MIM capacitor with 0.04 mm2 die area can be fabricated.
WANG Cong;ZHANG Fang;KIM Nam-Young. Development and Characterization of Metal-Insulator-Metal Capacitors with SiNx Thin Films by Plasma-Enhanced Chemical Vapor Deposition[J]. 中国物理快报, 2010, 27(7): 78101-078101.
WANG Cong, ZHANG Fang, KIM Nam-Young. Development and Characterization of Metal-Insulator-Metal Capacitors with SiNx Thin Films by Plasma-Enhanced Chemical Vapor Deposition. Chin. Phys. Lett., 2010, 27(7): 78101-078101.
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2010, Vol. 27 
