Band Edge Emission Improvement by Energy Transfer in Hybrid III-Nitride/Organic Semiconductor Nanostructure
Fu-Long Jiang1, Ya-Ying Liu1, Yang-Yang Li1, Peng Chen1,2**, Bin Liu1, Zi-Li Xie1, Xiang-Qian Xiu1, Xue-Mei Hua1, Ping Han1, Yi Shi1, Rong Zhang1, You-Dou Zheng1
1Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 2Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009
Abstract：GaN nanorods are fabricated using inductively coupled plasma etching with Ni nano-island masks. The poly [2-methoxy-5-(2-ethyl)hexoxy-1,4-phenylenevinylene] (MEH-PPV)/GaN-nanorod hybrid structure is fabricated by depositing the MEH-PPV film on the GaN nanorods by using the spin-coating process. In the hybrid structure, the spatial separation is minimized to achieve high-efficiency non-radiative resonant energy transfer. Optical properties of a novel device consisting of MEH-PPV/GaN-nanorod hybrid structure is studied by analyzing photoluminescence (PL) spectra. Compared with the pure GaN nanorods, the PL intensity of the band edge emission of GaN in the MEH-PPV/GaN-nanorods is enhanced as much as three times, and the intensity of the yellow band is suppressed slightly. The obtained results are analyzed by energy transfer between the GaN nanorods and the MEH-PPV. An energy transfer model is proposed to explain the phenomenon.
2016, Vol. 33 
