1School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China 2State Key Laboratory of Advanced Welding & Joining and Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen 518055, China 3Key Laboratory of Micro-systems and Micro-structures Manufacturing of Ministry of Education, Harbin Institute of Technology, Harbin 150001, China 4School of Materials Science and Engineering, Henan Key Laboratory of Aeronautic Materials and Application Technology, Zhengzhou University of Aeronautics, Zhengzhou 450046, China 5Analytical Instrumentation Center, School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China 6CAS Center for Excellence in Superconducting Electronics (CENSE), Chinese Academy of Sciences, Shanghai 200050, China
Abstract：Characterization of Fermi surface of the BaSn$_{3}$ superconductor ($T_{\rm c} \sim 4.4$ K) by de Haas–van Alphen (dHvA) effect measurement reveals its non-trivial topological properties. Analysis of non-zero Berry phase is supported by the ab initio calculations, which reveals a type-II Dirac point setting and tilting along the high symmetric $K$–$H$ line of the Brillouin zone, about 0.13 eV above the Fermi level, and other two type-I Dirac points on the high symmetric $\varGamma$–$A$ direction, but slightly far below the Fermi level. The results demonstrate BaSn$_{3}$ as an excellent example hosting multiple Dirac fermions and an outstanding platform for studying the interplay between nontrivial topological states and superconductivity.
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2020, Vol. 37 
