Theoretical Studies on Ultrasound Induced Hall Voltage and Its Application in Hall Effect Imaging
CHEN Xuan-Ze, MA Qing-Yu** , ZHANG Feng, SUN Xiao-Dong, CUI Hao-Chuan
Key Lab of Optoelectronics of Jiangsu Province, School of Physics and Technology, Nanjing Normal University, Nanjing 210046
Abstract :Based on the principles of the Hall effect for ultrasound excitation and wave propagation in a static magnetic field, the theory of ultrasound induced Hall voltage generation is derived in explicit formulae with consideration of the acoustic radiation for a planar transducer. It is proved by numerical simulations that the induced Hall voltage is mainly generated at the conductivity boundary and can be used to map the spatial variation of the conductivity value along the acoustic transmission path. Both the simulated Hall voltage and the reconstructed image show good agreement with the experimental results of Wen [Ultrasonic Imaging 20 (1998) 206, 21 (1999) 186]. The promising simulation results suggest the potential of implementing medical electrical impedance imaging by means of ultrasound induced Hall effect imaging.
收稿日期: 2012-05-08
出版日期: 2012-10-01
:
72.20.My
(Galvanomagnetic and other magnetotransport effects)
85.30.Fg
(Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices))
87.63.dh
(Ultrasonographic imaging)
[1] Jackson J D 1975 Classical Electrodynamics (New York: Wiley) [2] Ma Q Y and He B 2008 IEEE Trans. Biomed. Eng. 55 813 [3] Xiang L Z, Xing D, Gu H M, Zhou F F, Yang D W, Zeng L M and Yang S H 2007 Chin. Phys. Lett. 24 751 [4] Su Y X, Wang R K, Zhang F and Yao J Q 2006 Chin. Phys. Lett. 23 512 [5] Foster K R and Schwan H P 1986 Handbook of Biological Effects of Electromagnetic Fields (Boca Raton, FL: CRC) [6] Goss S A, Johnston R L, Dunn F 1978 J. Acoust. Soc. Am. 64 423 [7] Xu Y and He B 2005 Phys. Med. Biol. 50 5175 [8] Li X, Xu Y and He B 2006 J. Appl. Phys. 99 066112 [9] Sun X D, Zhang F, Ma Q Y, Tu J and Zhang D 2012 Appl. Phys. Lett. 100 024105 [10] Li Y L, Liu Z B, Ma Q Y, Guo X S and Zhang D 2010 Chin. Phys. Lett. 27 084302 [11] Wen H, Shah J and Balaban S 1998 IEEE Trans. Biomed. Eng. 45 119 [12] Wen H, Bennett E and Wiesler D G 1998 Ultrasonic Imaging 20 206 [13] Wen H 1999 Ultrasonic Imaging 21 186
[1]
. [J]. 中国物理快报, 2022, 39(6): 67101-.
[2]
. [J]. 中国物理快报, 2021, 38(7): 77304-.
[3]
. [J]. 中国物理快报, 2020, 37(8): 87101-.
[4]
. [J]. 中国物理快报, 2015, 32(09): 97501-097501.
[5]
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