Bound Phonons and Bistability of Donors in Gal-x A1x As: Te
LIAN Shi-yang
Department of Physics, Xiamen University, Xiamen 361005
Bound Phonons and Bistability of Donors in Gal-x A1x As: Te
LIAN Shi-yang
Department of Physics, Xiamen University, Xiamen 361005
关键词 ：
71.55.Eq ,
78.30.Fs
Abstract ： Bound phonons in Te-doped Gal-x A1x As were first observed in Raman scattering experiments at low temperature. They are assigned to electrons trapped at an effective-mass-like level. At higher temperatures, this level disappears to the benefit of a stable DX-like deep level. These results reveal a shallow-deep bistable characters of donors in Gal-x A1x As: Te under some conditions.
Key words ：
71.55.Eq
78.30.Fs
出版日期: 1996-06-01
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1996, Vol. 13 
