Structure Properties of Mgx Zn1-x O Films Deposited at Low Temperature
ZHANG Xi-Jian, MA Hong-Lei, WANG Qing-Pu, MA Jin, ZONG Fu-Jian, XIAO Hong-Di, JI Feng
School of Physics and Microelectronics, Shandong University, Jinan 250100
Structure Properties of Mgx Zn1-x O Films Deposited at Low Temperature
ZHANG Xi-Jian;MA Hong-Lei;WANG Qing-Pu;MA Jin;ZONG Fu-Jian;XIAO Hong-Di;JI Feng
School of Physics and Microelectronics, Shandong University, Jinan 250100
关键词 ：
81.15.Cd ,
68.55.Jk ,
78.30.Fs
Abstract ： Mgx Zn1-x O films (x=0.23) have been prepared on silicon substrates by radio-frequency magnetron sputtering at 80°C. The structure properties of Mgx Zn1-x O films are studied using x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), x-ray photoelectron spectroscopy and Raman spectra. The analysis of XRD and HRTEM indicates that the Mgx Zn1-x O films have hexagonal wurtzite single-phase structures and a preferred orientation with the c axis perpendicular to the substrates. Raman spectra of ZnO and Mgx Zn1-x O films reveal that the Mgx Zn1-x O films have not only the hexagonal wurtzite structure but also higher crystalline quality than ZnO films.
Key words ：
81.15.Cd
68.55.Jk
78.30.Fs
出版日期: 2005-04-01
引用本文:
ZHANG Xi-Jian;MA Hong-Lei;WANG Qing-Pu;MA Jin;ZONG Fu-Jian;XIAO Hong-Di;JI Feng. Structure Properties of Mgx Zn1-x O Films Deposited at Low Temperature[J]. 中国物理快报, 2005, 22(4): 995-997.
x Zn1-x O Films Deposited at Low Temperature. Chin. Phys. Lett., 2005, 22(4): 995-997.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I4/995
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