Variational Calculations of Neutral Bound Excitons in GaAs Quantum-Well Wires
LIU Jian-Jun1,2,3, DI Bing1, YANG Guo-Chen2, LI Shu-Shen3
1College of Physics, Hebei Normal University, Shijiazhuang 050016
2Institute of Physics, Hebei University of Technology, Tianjin 300130
3National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Variational Calculations of Neutral Bound Excitons in GaAs Quantum-Well Wires
LIU Jian-Jun1,2,3;DI Bing1;YANG Guo-Chen2;LI Shu-Shen3
1College of Physics, Hebei Normal University, Shijiazhuang 050016
2Institute of Physics, Hebei University of Technology, Tianjin 300130
3National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract： The binding energy of an exciton bound to a neutral donor (D0,X) in GaAs quantum-well wires is calculated variationally as a function of the wire width for different positions of the impurity inside the wire by using a two-parameter wavefunction. There is no artificial parameter added in our calculation. The results we have obtained show that the binding energies are closely correlated to the sizes of the wire, the impurity position, and also that their magnitudes are greater than those in the two-dimensional quantum wells compared. In addition, we also calculate the average interparticle distance as a function of the wire width. The results are discussed in detail.
LIU Jian-Jun;;DI Bing;YANG Guo-Chen;LI Shu-Shen. Variational Calculations of Neutral Bound Excitons in GaAs Quantum-Well Wires[J]. 中国物理快报, 2004, 21(5): 919-922.
LIU Jian-Jun, , DI Bing, YANG Guo-Chen, LI Shu-Shen. Variational Calculations of Neutral Bound Excitons in GaAs Quantum-Well Wires. Chin. Phys. Lett., 2004, 21(5): 919-922.
2004, Vol. 21 
