Surface State at K Point of Surface Brillouin Zone on Cu{111} Surface
YANG Yi, LIU Feng-qin, JIA Jin-feng, DONG Yu-hui, IBRAHIM Kurash, QIAN Hai-jie, WU Si-cheng*, LÜ Si-hua*
Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039
*Department of Physics, Peking University, Beijing 100871
Surface State at K Point of Surface Brillouin Zone on Cu{111} Surface
YANG Yi;LIU Feng-qin;JIA Jin-feng;DONG Yu-hui;IBRAHIM Kurash;QIAN Hai-jie;WU Si-cheng*;LÜ Si-hua*
Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039
*Department of Physics, Peking University, Beijing 100871
Abstract： Electronic structure of Cu {111} surface dong Γ-K line of surface Brillouin zone (SBZ) was studied using synchrotron radiation angle-resolved photoemission. A surface state located at 3.0eV below Fermi level, near K point of SBZ was observed for the first time. It is described by localized d-electron Tamm surface state.
(Clean metal, semiconductor, and insulator surfaces)
引用本文:
YANG Yi;LIU Feng-qin;JIA Jin-feng;DONG Yu-hui;IBRAHIM Kurash;QIAN Hai-jie;WU Si-cheng*;LÜSi-hua*. Surface State at K Point of Surface Brillouin Zone on Cu{111} Surface[J]. 中国物理快报, 1996, 13(6): 465-468.
YANG Yi, LIU Feng-qin, JIA Jin-feng, DONG Yu-hui, IBRAHIM Kurash, QIAN Hai-jie, WU Si-cheng*, LÜ, Si-hua*. Surface State at K Point of Surface Brillouin Zone on Cu{111} Surface. Chin. Phys. Lett., 1996, 13(6): 465-468.
1996, Vol. 13 
