Electron-Spectroscopy Study of Amorphous CN:Ti Films
CAO Ze-xian1, GUO Jian-dong1, WANG En-ge1, LIU Feng-qin2
1State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Institute of High Energy Physics, Chinese Academy of Sciences, Beijing
Electron-Spectroscopy Study of Amorphous CN:Ti Films
CAO Ze-xian1;GUO Jian-dong1;WANG En-ge1;LIU Feng-qin2
1State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Institute of High Energy Physics, Chinese Academy of Sciences, Beijing
Abstract： Amorphous CN:Ti films deposited by using the reactive magnetron sputtering method were annealed in vacuum under 200 to 600°C. Incorporation of Ti (less than 3at.%) has brought some new perspectives to the material. Electron-energy-loss spectrum indicates improved conductivity in CN:Ti films as in the insulating CN films. The high-resolution core-level x-ray photoelectron spectroscopy (XPS) studies show that most carbon atoms form homeopolar bonding in as-deposited CN:Ti film. While the N Is line always shrinks with increasing annealing temperature, the total full width at half maximum of C Is line decreases only at annealing temperature over 300°C when the broadening due to heterobonding formation is outdone by the effect of increasing order. An enhanced π-band feature in the valence-XPS spectra at high annealing temperatures confirms the graphitization tendency of this material.
(Surface states, band structure, electron density of states)
引用本文:
CAO Ze-xian;GUO Jian-dong;WANG En-ge;LIU Feng-qin. Electron-Spectroscopy Study of Amorphous CN:Ti Films[J]. 中国物理快报, 1999, 16(12): 928-930.
CAO Ze-xian, GUO Jian-dong, WANG En-ge, LIU Feng-qin. Electron-Spectroscopy Study of Amorphous CN:Ti Films. Chin. Phys. Lett., 1999, 16(12): 928-930.
1999, Vol. 16 
