Abstract： Using CHF3/C6H6 gases, amorphous fluorinated hydrocarbon films (a-C:F:H) were deposited by electron cyclotron resonance (ECR) chemical vapor deposition at room temperature. Dependence of the film properties on variable flow ratios R[CHF3]/{[CHF3]+[C6H6]} was investigated by infrared absorption, x-ray photoelectron spectroscopy, measurements of the film thickness and dielectric constant. Evidences show that the film deposition rate decreases linearly with the increasing flow ratios R and the adding of C6H6 source gas to ECR plasma enhances structural cross-linking in the a-C:F:H films. In order to obtain good structural stability of these films, it is necessary to reconcile configurations between C-C bond and H or F terminal atoms carefully. The experimental results indicate that an a-C:F:H film with low dielectric constant (k < 3) and high thermal stability ( > 400°C) has been deposited successfully at R = 56.3%.
(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
引用本文:
XIN Yu;XU Sheng-Hua;NING Zhao-Yuan;LU Xin-Hua;JIANG Mei-Fu;HUANG Song;DU Wei;CHEN Jun;YE Chao;CHENG Shan-Hua. An a-C:F:H Film with High Thermal Stability by Electron Cyclotron Resonance Chemical Vapor Deposition at Room Temperature[J]. 中国物理快报, 2003, 20(3): 423-426.
XIN Yu, XU Sheng-Hua, NING Zhao-Yuan, LU Xin-Hua, JIANG Mei-Fu, HUANG Song, DU Wei, CHEN Jun, YE Chao, CHENG Shan-Hua. An a-C:F:H Film with High Thermal Stability by Electron Cyclotron Resonance Chemical Vapor Deposition at Room Temperature. Chin. Phys. Lett., 2003, 20(3): 423-426.
2003, Vol. 20 
