A New Kind of Buffer Layer of TiO2 Self-Assembled Material in Organic Electroluminescent Devices
BAI Feng1 , DENG Zhen-Bo1 , ZHANG Meng-Xin1 , ZOU Wei-Yan2 , CAI Qiang2
1 Institute of Optoelectronics Technology, Northern Jiaotong University, Beijing 100044
2 Department of Material, Tsinghua University, Beijing 100084
A New Kind of Buffer Layer of TiO2 Self-Assembled Material in Organic Electroluminescent Devices
BAI Feng1 ;DENG Zhen-Bo1 ;ZHANG Meng-Xin1 ;ZOU Wei-Yan2 ;CAI Qiang2
1 Institute of Optoelectronics Technology, Northern Jiaotong University, Beijing 100044
2 Department of Material, Tsinghua University, Beijing 100084
关键词 :
78.60.Fi ,
85.60.Jb
Abstract : A new kind of TiO2 self-assembled nanometer material has been fabricated and is used as a hole-injecting buffer layer in organic electroluminescent devices. The luminance and the efficiency of a device individually rises from 1500 cd/m2 to 5000 cd/m2 and from 2.0 cd/A to 3.92 cd/A at the current density of 100 mA/cm2 . The enhancements in brightness and efficiency are attributed to an improved balance of hole and electron injections due to blocking of the injected holes by the buffer layer and a more homogeneous adhesion of the hole transporting layer to the anode.
Key words :
78.60.Fi
85.60.Jb
出版日期: 2003-03-01
引用本文:
BAI Feng;DENG Zhen-Bo;ZHANG Meng-Xin;ZOU Wei-Yan;CAI Qiang. A New Kind of Buffer Layer of TiO2 Self-Assembled Material in Organic Electroluminescent Devices[J]. 中国物理快报, 2003, 20(3): 420-422.
BAI Feng, DENG Zhen-Bo, ZHANG Meng-Xin, ZOU Wei-Yan, CAI Qiang. A New Kind of Buffer Layer of TiO2 Self-Assembled Material in Organic Electroluminescent Devices. Chin. Phys. Lett., 2003, 20(3): 420-422.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I3/420
[1]
ZHU Yan-Xu;XU Chen;HAN Jun;SHEN Guang-Di. Flip-Chip GaN-Based Light-Emitting Diodes with Mesh-Contact Electrodes [J]. 中国物理快报, 2007, 24(1): 268-270.
[2]
CHEN Hong-Da;LIU Hai-Jun;LIU Jin-Bin;GU Ming;HUANG Bei-Ju. Silicon Light Emitting Devices in CMOS Technology [J]. 中国物理快报, 2007, 24(1): 265-267.
[3]
CAO Yu-Lian;LIAN Peng;MA Wen-Quan;WANG Qing;WU Xu-Ming;HE Guo- Rong;LI Hui;WANG Xiao-Dong;SONG Guo-Feng;CHEN Liang-Hui. Influence of GaAsP Insertion Layers on Performance of InGaAsP/InGaP/AlGaAs Quantum-Well Laser [J]. 中国物理快报, 2006, 23(9): 2586-2586.
[4]
YU Nai-Sen;GUO Li-Wei;CHEN Hong;XING Zhi-Gang;WANG Jing;ZHU Xue-Liang;PENG Ming-Zeng;YAN Jian-Feng;JIA Hai-Qiang;ZHOU Jun-Ming. Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching [J]. 中国物理快报, 2006, 23(8): 2243-2246.
[5]
FENG Xue-Yuan;ZHANG Jia-Yu;XU Chun-Xiang;QIAO Yi;CUI Yi-Ping. Electroluminescence of a Multi-Layered Organic Light-Emitting Diode Utilizing Trans-4-[p-[N-methyl-N-(hydroxymethyl)amino]styryl]-N-Methylphridinium Tetraphenylborate as the Active Layer [J]. 中国物理快报, 2006, 23(6): 1607-1609.
[6]
WANG Xiao-Xin;ZHANG Jian-Guo;CHENG Bu-Wen;YU Jin-Zhong;WANG Qi-Ming. Electroluminescence Afterglow from Indium Tin Oxide/Si-Rich SiO2 /p-Si Structure [J]. 中国物理快报, 2006, 23(5): 1306-1309.
[7]
ZHANG Hong-Mei;YOU Han;SHI Jia-Wei;GUO Shu-Xu;WANG Wei;LIU Ming-Da;MA Dong-Ge. High Efficiency Red Organic Light-Emitting Diodes Based on Microcavity Structure [J]. 中国物理快报, 2006, 23(5): 1335-1338.
[8]
ZHANG Yong;HOU Qiong;MO Yue-Qi;PENG Jun-Biaov;CAO Yong. High-Efficiency Saturated Red Bilayer Light-Emitting Diodes: Comparative Studies with Devices from Blend of the Same Light-Emitting Polymers [J]. 中国物理快报, 2006, 23(4): 1015-1018.
[9]
WU Xiao-Ming;HUA Yu-Lin;WANG Zhao-Qi;YIN Shou-Gen;ZHENG Jia-Jin;DENG Jia-Chun;M. C. Petty. Pure RGB Emissions Based on a White OLED Combined with Optical Colour Filters [J]. 中国物理快报, 2006, 23(4): 1012-1014.
[10]
XIE Jing;ZHANG De-Qiang;WANG Li-Duo;DUAN Lian;QIAO Juan;QIU Yong. Improved Performance of Organic Light-Emitting Diodes with MgF2 as the Anode Buffer Layer [J]. 中国物理快报, 2006, 23(4): 928-931.
[11]
YUE Rui-Feng;YAO Yong-Zhao;LIU Li-Tian. Blue-Green Light Emission from a-SiCx :H-Based Fabry--Perot Microcavities [J]. 中国物理快报, 2006, 23(2): 482-485.
[12]
WU Zhong-Lian;LUO Cui-Ping;HU Zheng-Yong;JIANG Chang-Yun;HUANG Feng-Liang;ZHU Ke-Ming;ZHU Mei-Xiang;
ZHU Wei-Guo. Red Electrophosphorescence from Oxadiazoles-Functionalized Iridium Complexes in Polymer Light-Emitting Devices [J]. 中国物理快报, 2006, 23(11): 3091-3093.
[13]
WANG Jing;SONG Rui-Li;LIU Chun-Ling;JIANG Wen-Long;CHEN Shu-Fen;ZHAO Yi;HOU Jing-Ying;LIU Shi-Yong. Improved Performances for Organic Light-Emitting Diodes Based on Al2 O3 -Treated Indium--Tin Oxide Anode [J]. 中国物理快报, 2006, 23(11): 3094-3096.
[14]
LU Yu;YANG Zhi-Jian;PAN Yao-Bo;XU Ke;HU Xiao-Dong;ZHANG Bei;ZHANG Guo-Yi. Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition [J]. 中国物理快报, 2006, 23(1): 256-258.
[15]
QIN Qi;GUO Li-Wei;ZHOU Zhong-Tang;CHEN Hong;DU Xiao-Long;MEI Zeng-Xia;JIA Jin-Feng;XUE Qi-Kun;ZHOU Jun-Ming. Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases [J]. 中国物理快报, 2005, 22(9): 2298-2301.