III–V/Si Hybrid Laser Array with DBR on Si Waveguide
Yan-Ping Li1** , Li-Jun Yuan2 , Li Tao1 , Wei-Xi Chen1 , Bao-Jun Wang2 , Jiao-Qing Pan2**
1 Institute of Condensed Matter and Material Physics, School of Physics, Peking University, Beijing 1008712 The Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083
Abstract ：We report an eight-channel silicon evanescent laser array operating at continuous wave under room temperature conditions using the selective-area metal bonding technique. The laser array is realized by evanescently coupling the optical gain of InGaAsP multi-quantum wells to the silicon waveguides of varying widths and patterned with distributed Bragg reflector gratings. The lasers have emission peak wavelengths in a range of 1537–1543 nm with a wavelength spacing of about 1.0 nm. The thermal impedances $Z_{\rm T}$ of these hybrid lasers are evidently lower than those DFB counterparts
收稿日期: 2019-07-03
出版日期: 2019-09-21
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2019, Vol. 36 
