1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408 3Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026
Abstract：A four-wavelength Bragg reflection waveguide edge emitting diode based on intracavity spontaneous parametric down-conversion and four-wave mixing (FWM) processes is made. The structure and its tuning characteristic are designed by the aid of FDTD mode solution. The laser structure is grown by molecular beam epitaxy and processed to laser diode through the semiconductor manufacturing technology. Fourier transform infrared spectroscopy is applied to record wavelength information. Pump around 1.071 μm, signal around 1.77 μm, idler around 2.71 μm and FWM signal around 1.35 μm are observed at an injection current of 560 mA. The influences of temperature, carrier density and pump wavelength on tuning characteristic are shown numerically and experimentally.
2017, Vol. 34 
