中国物理快报  2020, Vol. 37 Issue (6): 64201-    DOI: 10.1088/0256-307X/37/42/064201
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A 10 Gb/s 1.5 µm Widely Tunable Directly Modulated InGaAsP/InP DBR Laser *
Dai-Bing Zhou1,2,3, Song Liang1,2,3**, Yi-Ming He1,2,3, Yun-Long Liu1,2,3, Wu Zhao1,2,3, Dan Lu1,2,3, Ling-Juan Zhao1,2,3, Wei Wang1,2,3
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
3Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Beijing 100083, China