1Department of Physics, Shanghai University, Shanghai 200444 2Suzhou Institute of Nano-tech and Nano-bionics, University of Chinese Academy of Sciences, Suzhou 215123 3Key Laboratory of Nanodevice and Applications, Chinese Academy of Sciences, Suzhou 215123
Abstract：Electroluminescence (EL) and temperature-dependent photoluminescence measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes (LDs) before lasing. Based on the ABC mode, the EL result demonstrates that non-radiative recombination rates of LDs with threshold current densities of 4 and 6 kA/cm$^{2}$ are similar, while LD with threshold current density of 4 kA/cm$^{2}$ exhibits a smaller auger-like recombination rate compared with the one of 6 kA/cm$^{2}$. The internal quantum efficiency droop is more serious for LD with higher threshold current density. The internal quantum efficiency value estimated from temperature-dependent photoluminescence is consistent with EL measurements.
2017, Vol. 34 
