High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0μm with Very Small Lateral Beam Divergence
Shu-Shan Huang1,2,3 , Yu Zhang1,2,3 , Yong-Ping Liao1,2,3 , Cheng-Ao Yang1,2,3 , Xiao-Li Chai1,2,3 , Ying-Qiang Xu1,2,3 , Hai-Qiao Ni1,2,3 , Zhi-Chuan Niu1,2,3**
1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 1000493 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026
Abstract ：We report high-power single-spatial-mode type-I GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system. A straight ridge and three different tapered waveguide structures with varying flare angles are fabricated to optimize the output power and spatial-mode performance. The best devices exhibit single-spatial-mode operation with room-temperature output power up to 350 mW in continuous-wave mode at an emission wavelength around 2.0 μm with a very small far-field lateral divergence angle, which is beyond state of the art in terms of single-spatial-mode output power.
收稿日期: 2017-01-22
出版日期: 2017-07-22
引用本文:
. [J]. 中国物理快报, 2017, 34(8): 84202-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/34/8/084202
或
https://cpl.iphy.ac.cn/CN/Y2017/V34/I8/84202
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2017, Vol. 34 
