1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049 3Department of Applied Physics and Materials Science, California Institute of Technology, California 91125, USA 4State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
Abstract：We experimentally demonstrate an InP-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source.
Jayaraman V, Jiang J, Li H, Heim P J S, Cole G D, Potsaid B, Fujimoto J G and Cable A 2011 Conf. Lasers Electro-Opt. (Baltimore Maryland, United States 1–6 May 2011) p 1
2018, Vol. 35 
