Effect of Post-Annealing on Structural and Electrical Properties of ZnO:In Films
Guo-Ping Qin1** , Hong Zhang2 , Hai-Bo Ruan3 , Jiang Wang1 , Dong Wang1 , Chun-Yang Kong1
1 College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 4013312 College of Physics, Chongqing University, Chongqing 4013313 Research Center for Materials Interdisciplinary Sciences, Chongqing University of Arts and Sciences, Chongqing 402160
Abstract ：Indium-doped ZnO (ZnO:In) films are deposited on quartz substrates by rf magnetron sputtering. The effects of post-annealing on structural, electrical, optical and Raman properties are investigated by x-ray diffraction, Raman scattering, Hall measurement and first-principles calculation. The results indicate that all of the ZnO:In films have excellent crystallinity with a preferred ZnO (002) orientation. It is found that the incorporation of In can dramatically increase the intensity of the 274 cm$^{-1}$ Raman mode. However, both post-annealing treatment and increasing O$_{2}$ partial pressure in the process of preparing thin films can reduce the intensity of the 274 cm$^{-1}$ mode or even eliminate it, and relax compressive stress of the ZnO:In film judged by analyzing the shifts of the (002) Bragg peaks and $E_{2}$ (high) mode. Finally, the origin of the 274 cm$^{-1}$ mode is inferred to be the vibration of Zn interstitial (Zn$_{\rm i}$) defects, which play a crucial role in the high electron concentration and low resistivity of ZnO:In films annealed in an appropriate temperature range (450–600$^{\circ}\!$C).
收稿日期: 2018-12-02
出版日期: 2019-03-23
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2019, Vol. 36 
