摘要We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100°C in N2 and in O2 ambient become n−type and p-type, respectively. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photoluminescence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100°C in N2 ambient, and these defects play an important role for n−type conductivity of ZnO. While the ZnO films annealed at 1100°C in O2 ambient, the oxygen antisite contributes ZnO films to p-type.
Abstract：We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100°C in N2 and in O2 ambient become n−type and p-type, respectively. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photoluminescence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100°C in N2 ambient, and these defects play an important role for n−type conductivity of ZnO. While the ZnO films annealed at 1100°C in O2 ambient, the oxygen antisite contributes ZnO films to p-type.
SUN Li-Jie;HE Dong-Kai;XU Xiao-Qiu;ZHONG Ze;WU Xiao-Peng;LIN Bi-Xia;FU Zhu-Xi
. Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering[J]. 中国物理快报, 2010, 27(12): 126802-126802.
SUN Li-Jie, HE Dong-Kai, XU Xiao-Qiu, ZHONG Ze, WU Xiao-Peng, LIN Bi-Xia, FU Zhu-Xi
. Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering. Chin. Phys. Lett., 2010, 27(12): 126802-126802.
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