GISAXS and ATR-FTIR Studies on Stress-Induced Microstructure Evolution of a-Si:H under H2 Plasma Exposure
ZUO Ze-Wen1, CUI Guang-Lei1, WANG Yu2, WANG Jun-Zhuan2, PU Lin2, SHI Yi2,**
1College of Physics and Electronics Information, Anhui Normal University, Wuhu 241000 2School of Electronic Science and Engineering, and Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093
Abstract：Microstructure evolution in the surface layer of hydrogenated amorphous silicon (a-Si:H) film exposed to H2 plasma is investigated using grazing-incidence small-angle x-ray scattering and attenuated total reflection-Fourier transform infrared spectroscopy. Molecular hydrogen generated in the microvoids through H-abstraction reaction drives the evolution of the void shape from spherical to ellipsoidal as well as increases the average void volume and total void volume fraction. High-pressure H2 in the microvoid promotes the formation of a strained structure with high compressive stress within the a-Si:H film, which favours the generation of the SiHn complex in the subsurface layer of the a-Si:H film by H insertion into strained Si–Si bonds.
. [J]. 中国物理快报, 2012, 29(10): 106801-106801.
ZUO Ze-Wen, CUI Guang-Lei, WANG Yu, WANG Jun-Zhuan, PU Lin, SHI Yi. GISAXS and ATR-FTIR Studies on Stress-Induced Microstructure Evolution of a-Si:H under H2 Plasma Exposure. Chin. Phys. Lett., 2012, 29(10): 106801-106801.
2012, Vol. 29 
