Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate
LIU Xu-Yan1,2, LIU Wei-Li1, MA Xiao-Bo1,2, CHEN Chao1,2, SONG Zhi-Tang1, LIN Cheng-Lu1
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate University of Chinese Academy of Sciences, Beijing 100190
Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate
LIU Xu-Yan1,2, LIU Wei-Li1, MA Xiao-Bo1,2, CHEN Chao1,2, SONG Zhi-Tang1, LIN Cheng-Lu1
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate University of Chinese Academy of Sciences, Beijing 100190
摘要Ultra-thin and near-fully relaxed SiGe substrate is fabricated using a modified Ge condensation technique, and then a 25-nm-thick biaxially tensile strained-Si with a low rms roughness is epitaxially deposited on a SiGe-on-Insulator (SGOI) substrate by ultra high vacuum chemical vapor deposition (UHVCVD). High-Resolution cross-sectional transmission electron microscope (HR-XTEM) observations reveal that the strained-Si/SiGe layer is dislocation-free and the atoms at the interface are well aligned. Furthermore, secondary ion mass spectrometry (SIMS) results show a sharp interface between layers and a uniform distribution of Ge in the SiGe layer. One percent in-plane tensile strain in the strained-Si layer is confirmed by ultraviolet (UV) Raman spectra, and the stress maintained even after a 30-s rapid thermal annealing (RTA) process at 1000°C. According to those results, devices based on strained-Si are expected to have a better performance than the conventional ones.
Abstract：Ultra-thin and near-fully relaxed SiGe substrate is fabricated using a modified Ge condensation technique, and then a 25-nm-thick biaxially tensile strained-Si with a low rms roughness is epitaxially deposited on a SiGe-on-Insulator (SGOI) substrate by ultra high vacuum chemical vapor deposition (UHVCVD). High-Resolution cross-sectional transmission electron microscope (HR-XTEM) observations reveal that the strained-Si/SiGe layer is dislocation-free and the atoms at the interface are well aligned. Furthermore, secondary ion mass spectrometry (SIMS) results show a sharp interface between layers and a uniform distribution of Ge in the SiGe layer. One percent in-plane tensile strain in the strained-Si layer is confirmed by ultraviolet (UV) Raman spectra, and the stress maintained even after a 30-s rapid thermal annealing (RTA) process at 1000°C. According to those results, devices based on strained-Si are expected to have a better performance than the conventional ones.
LIU Xu-Yan;LIU Wei-Li;MA Xiao-Bo;CHEN Chao;SONG Zhi-Tang;LIN Cheng-Lu. Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate[J]. 中国物理快报, 2009, 26(11): 116802-116802.
LIU Xu-Yan, LIU Wei-Li, MA Xiao-Bo, CHEN Chao, SONG Zhi-Tang, LIN Cheng-Lu. Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate. Chin. Phys. Lett., 2009, 26(11): 116802-116802.
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