中国物理快报  2009, Vol. 26 Issue (11): 116802-116802    DOI: 10.1088/0256-307X/26/11/116802
  CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES 本期目录 | 过刊浏览 | 高级检索 |
Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate
LIU Xu-Yan1,2, LIU Wei-Li1, MA Xiao-Bo1,2, CHEN Chao1,2, SONG Zhi-Tang1, LIN Cheng-Lu1
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate University of Chinese Academy of Sciences, Beijing 100190
Growth of High Quality Strained-Si on Ultra-Thin SiGe-on-Insulator Substrate
LIU Xu-Yan1,2, LIU Wei-Li1, MA Xiao-Bo1,2, CHEN Chao1,2, SONG Zhi-Tang1, LIN Cheng-Lu1
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate University of Chinese Academy of Sciences, Beijing 100190