Strain-Engineered Low-Density InAs Bilayer Quantum Dots for Single Photon Emission
LI Zhan-Guo1, LIU Guo-Jun1**, LI Lin1, FENG Ming2, LI Mei1, LU Peng1, ZOU Yong-Gang1, LI Lian-He1, GAO Xin1
1State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022 2 Public Center for Computer Teaching and Research, Jilin University, Changchun 130022
Strain-Engineered Low-Density InAs Bilayer Quantum Dots for Single Photon Emission
LI Zhan-Guo1, LIU Guo-Jun1**, LI Lin1, FENG Ming2, LI Mei1, LU Peng1, ZOU Yong-Gang1, LI Lian-He1, GAO Xin1
1State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022 2 Public Center for Computer Teaching and Research, Jilin University, Changchun 130022
摘要We investigate the growth of strain-engineered low-density InAs bilayer quantum dots (BQDs) on GaAs by molecular beam epitaxy. Owing to increasing dot size and In composition of the upper QDs, low-density BQDs in a GaAs matrix with an emission wavelength up to 1.4 μm at room temperature are achieved. Such a wavelength is larger than that of conventional QDs in a GaAs matrix (generally of about 1.3 μm). The optical properties of the BQDs are sensitive to annealing temperature used after spacer layer growth. Significant decrease of integrated PL intensity is observed as the annealing temperature increases. At 10 K, single photon emission from the BQDs with wavelength around 1.3 μm is observed.
Abstract：We investigate the growth of strain-engineered low-density InAs bilayer quantum dots (BQDs) on GaAs by molecular beam epitaxy. Owing to increasing dot size and In composition of the upper QDs, low-density BQDs in a GaAs matrix with an emission wavelength up to 1.4 μm at room temperature are achieved. Such a wavelength is larger than that of conventional QDs in a GaAs matrix (generally of about 1.3 μm). The optical properties of the BQDs are sensitive to annealing temperature used after spacer layer growth. Significant decrease of integrated PL intensity is observed as the annealing temperature increases. At 10 K, single photon emission from the BQDs with wavelength around 1.3 μm is observed.
(Molecular, atomic, ion, and chemical beam epitaxy)
引用本文:
LI Zhan-Guo;LIU Guo-Jun**;LI Lin;FENG Ming;LI Mei;LU Peng;ZOU Yong-Gang;LI Lian-He;GAO Xin. Strain-Engineered Low-Density InAs Bilayer Quantum Dots for Single Photon Emission[J]. 中国物理快报, 2010, 27(12): 126801-126801.
LI Zhan-Guo, LIU Guo-Jun**, LI Lin, FENG Ming, LI Mei, LU Peng, ZOU Yong-Gang, LI Lian-He, GAO Xin. Strain-Engineered Low-Density InAs Bilayer Quantum Dots for Single Photon Emission. Chin. Phys. Lett., 2010, 27(12): 126801-126801.
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2010, Vol. 27 
