Thickness Effect on (La$_{0.26}$Bi$_{0.74}$)$_{2}$Ti$_{4}$O$_{11}$ Thin-Film Composition and Electrical Properties
Hui-Zhen Guo, An-Quan Jiang**
State Key Laboratory of ASIC & System, School of Microelectronics, Fudan University, Shanghai 200433
Abstract ：Highly oriented (00l) (La$_{0.26}$Bi$_{0.74}$)$_{2}$Ti$_{4}$O$_{11}$ thin films are deposited on (100) SrTiO$_{3}$ substrates using the pulsed laser deposition technique. The grains form a texture of bar-like arrays along SrTiO$_{3}$ $\langle 110\rangle$ directions for the film thickness above 350 nm, in contrast to spherical grains for the reduced film thickness below 220 nm. X-ray diffraction patterns show that the highly ordered bar-like grains are the ensemble of two lattice-matched monoclinic (La,Bi)$_{4}$Ti$_{3}$O$_{12}$ and TiO$_{2}$ components above a critical film thickness. Otherwise, the phase decomposes into the random mixture of Bi$_{2}$Ti$_{2}$O$_{7}$ and Bi$_{4}$Ti$_{3}$O$_{4}$ spherical grains in thinner films. The critical thickness can increase up to 440 nm as the films are deposited on LaNiO$_{3}$-buffered SrTiO$_{3}$ substrates. The electrical measurements show the dielectric enhancement of the multi-components, and comprehensive charge injection into interfacial traps between (La,Bi)$_{4}$Ti$_{3}$O$_{12}$ and TiO$_{2}$ components occurs under the application of a threshold voltage for the realization of high-charge storage.
收稿日期: 2017-10-25
出版日期: 2018-01-23
:
68.65.-k
(Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties)
77.80.-e
(Ferroelectricity and antiferroelectricity)
77.84.-s
(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
67.80.dm
(Films)
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2018, Vol. 35 
