摘要Li-N dual-doped p-type ZnO (ZnO:(Li,N)) thin films are prepared by pulsed laser deposition. The optical properties are studied using temperature-dependent photoluminescence. The LiZn-NO complex acceptor with an energy level of 138meV is identified from the free-to-neutral-acceptor (e, A0) emission. The Haynes factor is about 0.087 for the LiZn-NO complex acceptor, with the acceptor bound-exciton binding energy of 12meV. Another deeper acceptor state located at 248meV, also identified from the (e, A0) emission, is attributed to zinc vacancy acceptor. The two acceptor states might both contribute to the observed p-type conductivity in ZnO:(Li,N).
Abstract：Li-N dual-doped p-type ZnO (ZnO:(Li,N)) thin films are prepared by pulsed laser deposition. The optical properties are studied using temperature-dependent photoluminescence. The LiZn-NO complex acceptor with an energy level of 138meV is identified from the free-to-neutral-acceptor (e, A0) emission. The Haynes factor is about 0.087 for the LiZn-NO complex acceptor, with the acceptor bound-exciton binding energy of 12meV. Another deeper acceptor state located at 248meV, also identified from the (e, A0) emission, is attributed to zinc vacancy acceptor. The two acceptor states might both contribute to the observed p-type conductivity in ZnO:(Li,N).
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