Improvement of Properties of p-GaN by Mg Delta Doping
PAN Yao-Bo, YANG Zhi-Jian, LU Yu, LU Min, HU Cheng-Yu, YU Tong-Jun, HU Xiao-Dong, ZHANG Guo-Yi
School of Physics and State Key Laboratory for Mesoscopic Physics, Research Centre for Wide Gap Semiconductor, Peking University, Beijing 100871
Improvement of Properties of p-GaN by Mg Delta Doping
PAN Yao-Bo;YANG Zhi-Jian;LU Yu;LU Min;HU Cheng-Yu;YU Tong-Jun;HU Xiao-Dong;ZHANG Guo-Yi
School of Physics and State Key Laboratory for Mesoscopic Physics, Research Centre for Wide Gap Semiconductor, Peking University, Beijing 100871
关键词 ：
61.72.Vv ,
73.61.Ey ,
81.15.Gh
Abstract ： The Mg-delta-doped GaN structure has been grown by low-pressure metalorganic chemical vapour deposition. The Hall-effect measurements reveal that the electrical properties are enhanced. The hole concentration is enhanced twice and hole mobility is enhanced three times by Mg-delta doping. Both the etch pit density data and the x-ray diffraction data demonstrate that Mg-delta doping can reduce the threading dislocation density of p-type GaN epilayer.
Key words ：
61.72.Vv
73.61.Ey
81.15.Gh
出版日期: 2004-10-01
:
61.72.Vv
73.61.Ey
(III-V semiconductors)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
引用本文:
PAN Yao-Bo;YANG Zhi-Jian;LU Yu;LU Min;HU Cheng-Yu;YU Tong-Jun;HU Xiao-Dong;ZHANG Guo-Yi. Improvement of Properties of p-GaN by Mg Delta Doping[J]. 中国物理快报, 2004, 21(10): 2016-2018.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I10/2016
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