Influence of Surface Quenching Effects on Luminescent Dynamics of ZnS:Mn2+ Nanocrystals
GAO Chang-Cheng, HUANG Shi-Hua, YOU Fang-Tian, KANG Kai, FENG Ying
Key Laboratory of Luminescence and Optical Information (Ministry of Education), Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044
Influence of Surface Quenching Effects on Luminescent Dynamics of ZnS:Mn2+ Nanocrystals
Key Laboratory of Luminescence and Optical Information (Ministry of Education), Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044
摘要A model describing surface quenching of isolated ion centres in nanocrystals is proposed based on the energy transfer between the doped ions and the nanocrystalline surface quenching centres. The quenching rate depends on the position of the ions in the nanocrystal, hence the decay curve under non-selective excitation is generally nonexponential. The decay curve calculated with this model is in good agreement with that of the 4T1→6A1 emission in ZnS:Mn2+ nanocrystals.
Abstract：A model describing surface quenching of isolated ion centres in nanocrystals is proposed based on the energy transfer between the doped ions and the nanocrystalline surface quenching centres. The quenching rate depends on the position of the ions in the nanocrystal, hence the decay curve under non-selective excitation is generally nonexponential. The decay curve calculated with this model is in good agreement with that of the 4T1→6A1 emission in ZnS:Mn2+ nanocrystals.
[1] Luo W X, Huang S H, You F T et al 2007 Acta Phys. Sin. 56 1765 (inChinese) [2]Chen L, Zhang J H, Luo Y S et al 2004 Chin. J. Lumin. 25 72 (in Chinese) [3]Sudarsan V, van Veggel Frank C J M, Herring R A, Raudsepp M2005 J. Mater. Chem. 15 1332 [4]Jin Chunming, Yu jiaqi, Huang Shihua et al 1996 Journal ofLuminescence 66/67:315 [5] Kubo T, Isobe T and Senna M 2002 J. Lumin. 99 39 [6] Lu S W, Lee B I, Wang Z L et al 2001 J. Lumin. 92 73 [7] Yu J, Liu H, Wang Y et al 1997 Opt. Lett. 22 913 [8] Xie P B, Zhang W P, Yin M et al 2000 J. Colloid and InterfaceScience 229 534 [9] Bowen W R and Jenner F 1995 Chem. Engin. Sci. 50 1707 [10]Liu E K, Zhu B S, Luo J S et al 2003 SemiconductorPhysics (Beijing: Publishing House of Electronics Industry) p 445(in Chinese) [11] Busse W, Gumlich H E, Meissner B and Thsis D 1976 J.Lumin. 12/13 693
2008, Vol. 25 
