P-Type Doping of GaN by Mg+ Implantation
YAO Shu-De1,3 , ZHOU Sheng-Qiang1 , YANG Zi-Jian1 , LU Yi-Hong2 , SUN Chang-Chun1 , SUN Chang1 , ZHANG Guo-Yi1 , VANTOMME Andre3 , PIPELEERS Bert3 , ZHAO Qiang
1 School of Physics, Peking University, Beijing 100871
2 College of Chemistry and Molecular Engineering, Peking University, Beijing 100871
3 Instituut voor Kern-en Stralingsfysica, Katholieke Universiteit of Leuven, B-3001, Leuven, Belgium
P-Type Doping of GaN by Mg+ Implantation
YAO Shu-De1,3 ;ZHOU Sheng-Qiang1 ;YANG Zi-Jian1 ;LU Yi-Hong2 ;SUN Chang-Chun1 ;SUN Chang1 ;ZHANG Guo-Yi1 ;VANTOMME Andre3 ;PIPELEERS Bert3 ;ZHAO Qiang
1 School of Physics, Peking University, Beijing 100871
2 College of Chemistry and Molecular Engineering, Peking University, Beijing 100871
3 Instituut voor Kern-en Stralingsfysica, Katholieke Universiteit of Leuven, B-3001, Leuven, Belgium
关键词 ：
61.72.Vv ,
82.80.Yc ,
74.25.Fy
Abstract ： Mg+ and Mg+ + P+ were introduced into GaN by ion implantation. The structure and crystalline quality of the GaN samples were analysed by Rutherford backscattering and channeling spectrometry before (Xmin = 1.6%) and after implantation (Xmin = 4.1%). X-ray diffraction reveals the existence of implantation-induced damage in the case of post-implantation followed by rapid thermal annealing. The resistivity, average factor, carrier concentration and carrier mobility were measured by the Hall effect. The transformation from n-type to p-type for GaN was observed.
Key words ：
61.72.Vv
82.80.Yc
74.25.Fy
出版日期: 2003-01-01
引用本文:
YAO Shu-De;ZHOU Sheng-Qiang;YANG Zi-Jian;LU Yi-Hong;SUN Chang-Chun;SUN Chang;ZHANG Guo-Yi;VANTOMME Andre;PIPELEERS Bert;ZHAO Qiang. P-Type Doping of GaN by Mg+ Implantation[J]. 中国物理快报, 2003, 20(1): 102-104.
+ Implantation. Chin. Phys. Lett., 2003, 20(1): 102-104.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I1/102
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