Determination of Al Composition in Strained AlGaN Layers
ZHOU Sheng-Qiang, WU Ming-Fang, YAO Shu-De
School of Physics, Peking University, Beijing 100871
Determination of Al Composition in Strained AlGaN Layers
ZHOU Sheng-Qiang;WU Ming-Fang;YAO Shu-De
School of Physics, Peking University, Beijing 100871
关键词 ：
81.05.Ea ,
61.10.Nz ,
82.80.Yc
Abstract ： Alx Ga1-x N/GaN heterostructures are grown on c-sapphire with the Al composition x from 0.2 to 0.4 and thicknesses from 20nm to 30nm. The lattice parameters a and c are determined from 2θ/ω scan. The AlGaN layers are found to be under tensile strain by using x-ray diffraction. Vegard’s law induces a large deviation in Al composition determination by only considering the linear relationship between one lattice parameter (a or c) and Al composition. The accurate determination of Al composition is only possible with consideration of both the lattice parameters a and c, by assuming the tetragonal distortion in the AlGaN layer. Additionally, the results obtained from x-ray diffraction are verified by Rutherford backscattering.
Key words ：
81.05.Ea
61.10.Nz
82.80.Yc
出版日期: 2005-12-01
:
81.05.Ea
(III-V semiconductors)
61.10.Nz
82.80.Yc
(Rutherford backscattering (RBS), and other methods ofchemical analysis)
引用本文:
ZHOU Sheng-Qiang;WU Ming-Fang;YAO Shu-De. Determination of Al Composition in Strained AlGaN Layers[J]. 中国物理快报, 2005, 22(12): 3189-3191.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I12/3189
[1]
CHEN Hai-Yong;HE Chun-Yuan;GAO Chun-Xiao;ZHANG Jia-Hua;GAO Shi-Yong;LU Hong-Liang;NIE Yan-Guang;LI Dong-Mei;KAN Shi-Hai;ZOU Guang-Tian. Structural Transition of Gd2 O3 :Eu Induced by High Pressure
[2]
WANG Huan;YAO Shu-De;PAN Yao-Bo;YU Tong-Jun;ZHANG Guo-Yi. Microstructure Study on Heterostructures of AlInGaN/GaN/Al2 O3 by Using Rutherford ackscattering/Channelling and XRD
[3]
WANG Jian-Feng;ZHANG Bao-Shun;ZHANG Ji-Cai;ZHU Jian-Jun;WANG Yu-Tian;CHEN Jun; LIU Wei;JIANG De-Sheng;YAO Duan-Zheng; YANG Hui. Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer
[4]
YU Nai-Sen;GUO Li-Wei;CHEN Hong;XING Zhi-Gang;WANG Jing;ZHU Xue-Liang;PENG Ming-Zeng;YAN Jian-Feng;JIA Hai-Qiang;ZHOU Jun-Ming. Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates Fabricated by Wet Chemical Etching
[5]
MA Hong-Xia;HAN Yan-Jun;SHENTU Wei-Jin;ZHANG Xian-Peng;LUO Yi;. A Novel Ni/Ag/Pt Ohmic Contact to P-Type GaN for Flip-Chip Light-Emitting Diodes
[6]
ZHANG Yong-Gang;ZHENG Yan-Lan;LIN Chun;LI Ai-Zhen;LIU Sheng. Continuous Wave Performance and Tunability of MBE Grown 2.1μm InGaAsSb/AlGaAsSb MQW lasers
[7]
XIE Xin-Jian;ZHONG Fei;QIU Kai;LIU Gui-Feng;YIN Zhi-Jun;WANG Yu-Qi;LI Xin-Hua;JI Chang-Jian;HAN Qi-Feng;CHEN Jia-Rong;CAO Xian-Cun. Growth of Strain Free GaN Layers on (0001) Oriented Sapphire by Using Quasi-Porous GaN Template
[8]
LI Feng-Ying;JIN Chang-Qing;YOU Shu-Jie;XIAO Chang-Jiang;YU Ri-Cheng;WANG Xiao-Hui;LIU Jing;LI Xiao-Dong;LI Yan-Chun;CHEN Liang-Chen. Pressure-Induced Phase Transition in BaTiO3 Nanocrystals
[9]
CHEN Zhi-Tao;;XU Ke;;GUO Li-Ping;YANG Zhi-Jian;;PAN Yao-Bo;;SU Yue-Yong;;ZHANG Han;;SHEN Bo;;ZHANG Guo-Yi;. Mosaic Structure Evolution in GaN Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition
[10]
CHEN Zhi-Tao;;SU Yue-Yong;;YANG Zhi-Jian;;ZHANG Yan;;ZHANG Bin;;GUO Li-Ping;XU Ke;;PAN Yao-Bao;;ZHANG Han;ZHANG Guo-Yi;. Room-Temperature Ferromagnetism of Ga1-x Mnx N Grown by Low-Pressure Metalorganic Chemical Vapour Deposition
[11]
HUANG Sheng-Li;RUAN Ke-Qing;TANG Yu;CAO Lie-Zhao;LI Xiao-Guang. Electrical Properties and Raman Spectra of BaBi1-x Pbx O3
[12]
ZHOU Sheng-Qiang;WU Ming-Fang;YAO Shu-De;WANG Li;JIANG Feng-Yi. Structural, Morphology and Optical Properties of Epitaxial ZnO Films Grown on Al2 O3 by MOCVD
[13]
LI Feng-Ying;JIN Chang-Qing;CHEN Liang-Chen;ZHOU Bo;SHI Li-Chi;LIU Jing;LI Xiao-Dong;LI Yan-Chun;YU Ri-Cheng. Compressibility of Lattice Parameters of Several Layered Compounds
[14]
XUE Cheng-Shan;WU Yu-Xin;ZHUANG Hui-Zhao;TIAN De-Heng;LIU Yi-An;HE Jian-Ting;AI Yu-Jie;SUN Li-Li;WANG Fu-Xue;CAO Yu-Ping. Fabrication of Syringe-Shaped GaN Nanorods
[15]
JING Shi-Wei;LIU Yi-Chun;LIANG Yu;MA Jian-Gang;LU You-Ming;SHEN De-Zhen;ZHANG Ji-Ying;FAN Xi-Wu;MU Ri-Xiang. Compositional and Structural Properties of TiO2-x Nx Thin Films Deposited by Radio-Frequency Magnetron Sputtering
2005, Vol. 22 
