Cluster Model for p-Type Doping of ZnSe
REN Tian-ling, ZHU Jia-lin, XIONG Jia-jiong, DUAN Wen-hui, WANG Fu-he1
Department of Physics, Tsinghua University, Beijing 100084
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
Cluster Model for p-Type Doping of ZnSe
REN Tian-ling;ZHU Jia-lin;XIONG Jia-jiong;DUAN Wen-hui;WANG Fu-he1
Department of Physics, Tsinghua University, Beijing 100084
Institute of Physics, Chinese Academy of Sciences, Beijing 100080
关键词 ：
61.72.Vv ,
71.55.Gs
Abstract ： Cluster model with DV-Xα method is used to study the structural and electronic properties of the p-type doping of ZnSe. It is found that there is Jahn-Teller distortion for P doping and almost no Jahn-Teller distortion for N doping, and that the impurity levels with respect to the maximum of valence band are 118 and 96meV for N and P doping, respectively. The reasons why N can serve as a better dopant than P for p-type ZnSe are discussed.
Key words ：
61.72.Vv
71.55.Gs
出版日期: 1997-07-01
引用本文:
REN Tian-ling;ZHU Jia-lin;XIONG Jia-jiong;DUAN Wen-hui;WANG Fu-he. Cluster Model for p-Type Doping of ZnSe[J]. 中国物理快报, 1997, 14(7): 528-530.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I7/528
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1997, Vol. 14 
