Tetragonal Distortion of InN Thin Films by RBS/Channeling
DING Zhi-Bo1,2, WU Wei1, WANG Kun1, FA Tao1, YAO Shu-De1
1State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 1008712Nuclear and Radiation Safety Centre, State Environmental Protection Administration, Beijing 100088
Tetragonal Distortion of InN Thin Films by RBS/Channeling
DING Zhi-Bo1,2, WU Wei1, WANG Kun1, FA Tao1, YAO Shu-De1
1State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 1008712Nuclear and Radiation Safety Centre, State Environmental Protection Administration, Beijing 100088
摘要Rutherford backscattering and channeling spectrometry (RBS/C) are used to identify the crystalline quality (χmin=4.87%) of an InN thin film as a function of depth, and make a non-destructive quantitative analysis of the structure, in order to analyze the tetragonal distortion of the InN thin film at the depth determined.
Abstract：Rutherford backscattering and channeling spectrometry (RBS/C) are used to identify the crystalline quality (χmin=4.87%) of an InN thin film as a function of depth, and make a non-destructive quantitative analysis of the structure, in order to analyze the tetragonal distortion of the InN thin film at the depth determined.
(Elasticity and anelasticity, stress-strain relations)
引用本文:
DING Zhi-Bo;WU Wei;WANG Kun;FA Tao;YAO Shu-De. Tetragonal Distortion of InN Thin Films by RBS/Channeling[J]. 中国物理快报, 2009, 26(8): 86111-086111.
DING Zhi-Bo, WU Wei, WANG Kun, FA Tao, YAO Shu-De. Tetragonal Distortion of InN Thin Films by RBS/Channeling. Chin. Phys. Lett., 2009, 26(8): 86111-086111.
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2009, Vol. 26 
