Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapor Deposition with the c-Axis Parallel to the Substrate
LÜ Jian-Guo, YE Zhi-Zhen, WANG Lei, ZHAO Bing-Hui, HUANG Jing-Yun
State Key Laboratory of Silicon Materials, Zhejiang University,
Hangzhou 310027
Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapor Deposition with the c-Axis Parallel to the Substrate
LÜ Jian-Guo;YE Zhi-Zhen;WANG Lei;ZHAO Bing-Hui;HUANG Jing-Yun
State Key Laboratory of Silicon Materials, Zhejiang University,
Hangzhou 310027
关键词 :
61.72.Vv ,
68.55.Jk ,
81.15.Gh
Abstract : We report on N-doped p-type ZnO films with the c-axis parallel to the substrate. ZnO films were prepared on an α-Al2 O3 (0001) substrate by solid-source chemical vapor deposition (CVD). Zn(CH3 COO)2 .2H2 O was used as the precursor and CH3 COONH4 as the nitrogen source. Growth temperature is varied from 300°C to 600°C. The as-grown ZnO film deposited at 500°C showed p-type conduction with its resistivity of 42 Ωcm, carrier density 3.7 x 1017 cm-3 and Hall mobility 1.26cm2 V-1 .s-1 at room temperature, which are the best properties for p-type ZnO deposited by CVD. The p-type ZnO film possesses a transmittance about 85% in the visible region and a band gap of 3.21 eV at room temperature.
Key words :
61.72.Vv
68.55.Jk
81.15.Gh
出版日期: 2002-10-01
引用本文:
LÜJian-Guo;YE Zhi-Zhen;WANG Lei;ZHAO Bing-Hui;HUANG Jing-Yun. Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapor Deposition with the c-Axis Parallel to the Substrate[J]. 中国物理快报, 2002, 19(10): 1494-1497.
LÜ, Jian-Guo, YE Zhi-Zhen, WANG Lei, ZHAO Bing-Hui, HUANG Jing-Yun. Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapor Deposition with the c-Axis Parallel to the Substrate. Chin. Phys. Lett., 2002, 19(10): 1494-1497.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2002/V19/I10/1494
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