Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapor Deposition with the c-Axis Parallel to the Substrate

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	LÜ
	Jian-Guo
	YE Zhi-Zhen
	WANG Lei
	ZHAO Bing-Hui
	HUANG Jing-Yun

关键词 ： 61.72.Vv, 68.55.Jk, 81.15.Gh

Abstract： We report on N-doped p-type ZnO films with the c-axis parallel to the substrate. ZnO films were prepared on an α-Al₂O₃ (0001) substrate by solid-source chemical vapor deposition (CVD). Zn(CH₃COO)₂.2H₂O was used as the precursor and CH₃COONH₄ as the nitrogen source. Growth temperature is varied from 300°C to 600°C. The as-grown ZnO film deposited at 500°C showed p-type conduction with its resistivity of 42 Ωcm, carrier density 3.7 x 10¹⁷cm^-3 and Hall mobility 1.26cm²V^-1.s^-1 at room temperature, which are the best properties for p-type ZnO deposited by CVD. The p-type ZnO film possesses a transmittance about 85% in the visible region and a band gap of 3.21 eV at room temperature.

Key words： 61.72.Vv 68.55.Jk 81.15.Gh

出版日期: 2002-10-01

:	61.72.Vv
	68.55.Jk
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

引用本文:

LÜJian-Guo;YE Zhi-Zhen;WANG Lei;ZHAO Bing-Hui;HUANG Jing-Yun. Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapor Deposition with the c-Axis Parallel to the Substrate[J]. 中国物理快报, 2002, 19(10): 1494-1497.
LÜ, Jian-Guo, YE Zhi-Zhen, WANG Lei, ZHAO Bing-Hui, HUANG Jing-Yun. Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapor Deposition with the c-Axis Parallel to the Substrate. Chin. Phys. Lett., 2002, 19(10): 1494-1497.

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https://cpl.iphy.ac.cn/CN/ 或 https://cpl.iphy.ac.cn/CN/Y2002/V19/I10/1494