P-BN/n-Si Heterojunction Prepared by Beryllium ion Implantation
HE Bin1,3, CHEN Guang-Hua1, LI Zhi-Zhong1, DENG Jin-Xiang2,ZHANG Wun-Jun3
1College of Materials Science and Technology, Beijing University of Technology, Beijing 1000222College of Applied Sciences, Beijing University of Technology, Beijing 1000223Center of Super-Diamond and Advance Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
P-BN/n-Si Heterojunction Prepared by Beryllium ion Implantation
HE Bin1,3;CHEN Guang-Hua1;LI Zhi-Zhong1;DENG Jin-Xiang2,ZHANG Wun-Jun3
1College of Materials Science and Technology, Beijing University of Technology, Beijing 1000222College of Applied Sciences, Beijing University of Technology, Beijing 1000223Center of Super-Diamond and Advance Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
摘要A boron nitride (BN)/silicon p-n heterojunction is fabricated by implanting beryllium (Be) ions into the BN films deposited by rf sputtering on n-type Si (111) substrates. The FTIR observations indicate that the films deposited have a mixed phase composition of sp2- and sp3-hybridized BN. Considering the thickness of the BN layer, the ion implantation is conducted at an ion energy of 100keV with the dose of 5×1015cm-2. After annealing at a high temperature, the surface resistance of the BN film decreases significantly by 6 orders down to 1.2×105Ω. Space-charge-limited current characteristic, which indicates the existence of shallow traps in the film, is observed. Current-voltage measurements across the BN film and the Si substrate reveal a clear rectification feature, demonstrating the achievement of p-type doping of BN films by Be ion implantation.
Abstract：A boron nitride (BN)/silicon p-n heterojunction is fabricated by implanting beryllium (Be) ions into the BN films deposited by rf sputtering on n-type Si (111) substrates. The FTIR observations indicate that the films deposited have a mixed phase composition of sp2- and sp3-hybridized BN. Considering the thickness of the BN layer, the ion implantation is conducted at an ion energy of 100keV with the dose of 5×1015cm-2. After annealing at a high temperature, the surface resistance of the BN film decreases significantly by 6 orders down to 1.2×105Ω. Space-charge-limited current characteristic, which indicates the existence of shallow traps in the film, is observed. Current-voltage measurements across the BN film and the Si substrate reveal a clear rectification feature, demonstrating the achievement of p-type doping of BN films by Be ion implantation.
HE Bin;CHEN Guang-Hua;LI Zhi-Zhong;DENG Jin-Xiang;ZHANG Wun-Jun. P-BN/n-Si Heterojunction Prepared by Beryllium ion Implantation[J]. 中国物理快报, 2008, 25(1): 219-222.
HE Bin, CHEN Guang-Hua, LI Zhi-Zhong, DENG Jin-Xiang, ZHANG Wun-Jun. P-BN/n-Si Heterojunction Prepared by Beryllium ion Implantation. Chin. Phys. Lett., 2008, 25(1): 219-222.
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2008, Vol. 25 
