P-type ZnO:N Films Prepared by Thermal Oxidation of Zn3 N2
ZHANG Bin1,2** , LI Min1,2,3 , WANG Jian-Zhong1,2 , SHI Li-Qun1,2
1 Applied Ion Beam Physics Laboratory (Key Laboratory of the Ministry of Education), Institute of Modern Physics, Fudan University, Shanghai 2004332 Department of Nuclear Science and Technology, Fudan University, Shanghai 2004333 Alternative Energy and Power Generation Technology Institute, Dongfang Electric Corporation Central Academy, Chengdu 611731
Abstract ：We prepare p-type ZnO:N films by annealing Zn3 N2 films in oxygen over a range of temperatures. The prepared films are characterized by various techniques, such as Rutherford backscattering spectroscopy, x-ray diffraction, x-ray photoemission spectroscopy, the Hall effect and photoluminescence spectra. The results show that the Zn3 N2 films start to transform to ZnO at 300°C and the N content decreases with an increase in annealing temperature. N has two local chemical states: zinc oxynitride (ZnO1?x Nx O α -NO
收稿日期: 2012-11-30
出版日期: 2013-03-02
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