中国物理快报  2015, Vol. 32 Issue (02): 27802-027802    DOI: 10.1088/0256-307X/32/2/027802
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The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections
RAJABI Kamran1, CAO Wen-Yu1, SHEN Tihan 2, JI Qing-Bin1, HE Juan1, YANG Wei1, LI Lei1, LI Ding1, WANG Qi3, HU Xiao-Dong1**
1State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
2Joule Physics Laboratory, School of Computing, Science and Engineering, College of Science and Technology, University of Salford, Salford M5 4WT, UK
3Dongguan Institute of Optoelectronics, Peking University, Dongguan 523808