Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate
Qi Wang1,2, Jun-Chi Yu1,2, Tao Tao1,2, Bin Liu1,2**, Ting Zhi3, Xu Cen1,2, Zi-Li Xie1,2, Xiang-Qian Xiu1,2, Yu-Gang Zhou1,2, You-Dou Zheng1,2, Rong Zhang1,2
1Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 2Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093 3College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing 210093
Abstract：GaN-based micro light emitting diodes (micro-LEDs) on silicon (Si) substrates with 40 μm in diameter are developed utilizing standard photolithography and inductively coupled plasma etching techniques. From current-voltage curves, the relatively low turn-on voltage of 2.8 V and low reverse leakage current in the order of 10$^{-8}$ A/cm$^{2}$ indicate good electrical characteristics. As the injection current increases, the electroluminescence emission wavelength hardly shifts at around 433 nm, and the relative external quantum efficiency slightly decays, because the impact of quantum-confined Stark effect is not serious in violet-blue micro-LEDs. Since GaN-LEDs are cost effective on large-area Si and suitable for substrate transfer or vertical device structures, the fabricated micro-LEDs on Si should have promising applications in the fields of high-resolution display and optical communication.
2019, Vol. 36 
